AI data centres
Rack power density keeps climbing, and every conversion stage counts. Higher-efficiency devices and converters help lower PUE and thermal load.
InnoHK · SEAM@InnoHK
Power semiconductors,
engineered for a low-carbon future
The Hong Kong Power Semiconductor Chip and Application R&D Centre (PowerSAC) is led by HKUST. We advance wide-bandgap devices, power integrated circuits and high-efficiency conversion — building a complete innovation chain from materials to systems for AI data centres, electric mobility and smart grids.
Scroll
2026Established
04Research pillars
09Local & global partners
03Application domains
A complete innovation chain, from materials to systems
Approved in 2026 by the Innovation and Technology Commission of the HKSAR Government, PowerSAC is established under SEAM@InnoHK, the third InnoHK research platform. Led by HKUST, it focuses on sustainability, energy, advanced manufacturing and materials.
The centre drives next-generation wide-bandgap semiconductor technology — spanning advanced power devices, power ICs and high-efficiency conversion for high-load applications such as AI data centres. We work closely with City University of Hong Kong, the PolyU Electric Vehicle Research Centre and the Microelectronics Research Institute, alongside EPFL, Nagoya University, the University of Toronto, Peking University and Tsinghua University.
- Led by HKUST
- Part of the InnoHK initiative
- Local and international collaboration
- Industry transfer and startup incubation
Four pillars, interlocking
From materials to systems, each stage is advanced by a dedicated team and converges on a shared validation platform.
RP1
Wide-bandgap Materials & Advanced Power Devices
From GaN and SiC epitaxy and device architectures to process technology, we develop power devices with higher blocking voltage, lower loss and greater reliability — pushing beyond the physical limits of silicon.
Explore
RP2
Power Integrated Circuits & Intelligent Gate Driving
Integrating power devices, gate drivers, protection and sensing into a single chip or module — combined with digital control and condition monitoring for more compact, intelligent power stages.
Explore
RP3
High-efficiency Power Conversion & Systems
High-density, high-efficiency converter topologies and control strategies for AI data centres, EV charging and energy storage — targeting efficiencies above 99% and higher power density.
Explore
RP4
System-level Validation & Application Demonstration
Building a validation platform spanning device characterisation, module packaging and system reliability — working with industry partners on real-world demonstrations and standards.
Explore01MaterialsGaN / SiC epitaxy & defect control
02DevicesHigh-voltage, low-loss devices
03IntegrationDriver, protection & sensing
04ConversionEfficient, dense conversion
05ValidationReliability & field testing
06ApplicationData centres, EVs, grids
More efficient power for a high-load era
Electric mobility & charging
From on-board chargers and traction inverters to DC fast charging, wide-bandgap devices make higher switching frequency, smaller size and greater reliability compatible.
Grid, storage & industry
Renewable integration and storage demand bidirectional, efficient and durable power electronics — our research serves exactly this infrastructure.
Latest news
Centre news
PowerSAC officially unveiled as inaugural power semiconductor forum draws over 200 experts
The centre held its unveiling ceremony at Hong Kong Science Park, followed by a forum bringing together academia, industry and investors to discuss wide-bandgap devices and AI power delivery.
Read more
Research
PowerSAC showcases 1,200V GaN power module at InnoHK showcase
The team presented its first in-house 1,200V GaN power module prototype and a high-density converter reference design for 48V DC power delivery.
Read more
Announcement
HKUST receives approval to establish two new InnoHK research centres
HKUST has received approval from the Innovation and Technology Commission to establish two centres under SEAM@InnoHK, including the power semiconductor centre.
Read more
Partnership
PowerSAC signs MoU with the Microelectronics Research Institute
The two parties will collaborate on power device processes, packaging and testing, and talent development, jointly building pilot-line and validation capabilities for industry.
Read moreUpcoming
5
December 2026
Opening Ceremony & Technology Showcase
Official opening of the centre, with first results from all four research pillars and an academia-industry exchange session.
09:30 – 17:00
Hong Kong Science Park
21
November 2026
Power Device Reliability & Packaging Workshop
Focused on dynamic reliability of wide-bandgap devices, accelerated lifetime testing and advanced packaging thermal design.
14:00 – 18:00
HKUST
Building the ecosystem together
Local universities, leading international laboratories and industry partners form the PowerSAC network.
HKUST
City University of Hong Kong
PolyU Electric Vehicle Research Centre
Microelectronics Research Institute
EPFL
Nagoya University
University of Toronto
Peking University
Tsinghua University
Let's advance the next step in power semiconductors
We welcome proposals from academia, industry and investors — and researchers who want to join us.