RP1 · Materials & devices
Wide-bandgap Materials & Advanced Power Devices
From GaN and SiC epitaxy and device architectures to process technology, we develop power devices with higher blocking voltage, lower loss and greater reliability — pushing beyond the physical limits of silicon.
Silicon power devices are approaching their physical limits. Achieving lower loss and higher reliability at higher voltages and frequencies requires starting from materials and device architectures.
Research focus
GaN and SiC epitaxy and defect control
Reducing dislocation density and improving uniformity and yield on larger wafers.
Lateral and vertical device architectures
HEMTs, MOSFETs and novel termination structures across voltage classes.
Dynamic Ron and reliability physics
Trap effects, degradation mechanisms and accelerated test methods.
High-temperature, high-voltage interfaces
Long-term stability of passivation, metal contacts and packaging materials.
Expected outcomes
- Repeatable process recipes and design rules
- Device prototypes at 1,200V and above
- Reliability test guidance for industry
Let's advance the next step in power semiconductors
We welcome proposals from academia, industry and investors — and researchers who want to join us.